Please use this identifier to cite or link to this item: http://thuvienlamdong.org.vn:81/handle/DL_134679/62255
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dc.contributor.authorĐặng, Quốc Tuấn
dc.contributor.authorTrương, Hữu Lý
dc.contributor.authorNguyễn, Thanh Phương
dc.contributor.authorTrần, Duy Hoài
dc.contributor.authorNguyễn, Thị Hồng Thắm
dc.contributor.authorNguyễn, Văn Dũng
dc.contributor.authorTrần, Thụy Tuyết Mai
dc.date.accessioned2023-12-26T09:14:01Z-
dc.date.available2023-12-26T09:14:01Z-
dc.date.issued2022
dc.identifier.urihttps://sti.vista.gov.vn/tw/Pages/tai-lieu-khcn.aspx?ItemID=353573en
dc.identifier.urihttp://thuvienlamdong.org.vn:81/handle/DL_134679/62255-
dc.language.isovien
dc.relation.ispartofseriesTạp chí Công thương - 2022 - no.20 - tr.338-344 - ISSN.0866-7756en
dc.subjectTạp chí Công thươngen
dc.titleMàng mỏng graphene: Sự hình thành trực tiếp từ vật liệu đế nền SiC thương mại = Epitaxial graphene grown on silicon carbide by using the sublimation process and investigation of gaseous No2 sensitivityen
dc.typeArticleen
item.fulltextCó toàn văn-
item.grantfulltextopen-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.languageiso639-1vi-
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